| PART |
Description |
Maker |
| MDP1933 MDP1933TH |
Single N-channel Trench MOSFET 80V, 105A, 7.0m(ohm)
|
MagnaChip Semiconductor...
|
| IRFPS3815 |
150V Single N-Channel HEXFET Power MOSFET in a Super 247 (TO-274AA) package
Power MOSFET(Vdss=150V, Rds(on)=0.015ohm, Id=105A)
|
IRF[International Rectifier]
|
| IRF9610S IRF9610STRL IRF9610STRR |
-200V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-200V, Rds(on)=3.0ohm, Id=-1.8A)
Power MOSFET(Vdss=-200V/ Rds(on)=3.0ohm/ Id=-1.8A)
CAP 3.9PF 50V /-0.1PF C0G SMD-0402 TR-7-PA SN100 HIGH-FREQ 功率MOSFET（减振钢板基本\u003d-00V，的Rds（on）\u003d 3.0ohm，身份证\u003d- 1.8A
|
IRF[International Rectifier]
International Rectifier, Corp.
|
| FQPF10N20L |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 6.8A I(D) | TO-220F 晶体管| MOSFET的| N沟道| 200伏五（巴西）直| 6.8AI（四）|20F
200V LOGIC N-Channel MOSFET
|
Fairchild Semiconductor, Corp.
|
| IRKU105/04S90 IRKU105/12S90 IRKV105/04S90 IRKV105/ |
THYRISTOR MODULE|SCR|DUAL|CC|400V V(RRM)|105A I(T)
THYRISTOR MODULE|SCR|DUAL|CC|1.2KV V(RRM)|105A I(T)
晶闸管模块|可控硅|双|加利福尼亚州| 400V五（无线资源管理）| 105A及我（翻译）
晶闸管模块|可控硅|双|加利福尼亚州| 1.2KV五（无线资源管理）| 105A及我（翻译）
THYRISTOR MODULE|SCR|DUAL|CA|800V V(RRM)|105A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 800V的五（无线资源管理）| 105A及我（翻译）
THYRISTOR MODULE|SCR|DUAL|CA|1.6KV V(RRM)|105A I(T) 晶闸管模块|可控硅|双|加利福尼亚州| 1.6KV五（无线资源管理）| 105A及我（翻译）
THYRISTOR MODULE|SCR|DUAL|CC|1.6KV V(RRM)|105A I(T) 晶闸管模块|可控硅|双|消委会| 1.6KV五（无线资源管理）| 105A及我（翻译）
|
TE Connectivity, Ltd.
International Rectifier, Corp.
|
| IRFI630G IRFI630 IRFI630GPBF |
200V Single N-Channel HEXFET Power MOSFET in a TO-220 FullPak (Iso) package
Power MOSFET(Vdss=200V, Rds(on)=0.40ohm, Id=5.9A)
HEXFET? Power MOSFET
Power MOSFET(Vdss=200V/ Rds(on)=0.40ohm/ Id=5.9A)
|
IRF[International Rectifier]
|
| IRHNB8260 IRHNB3260 IRHNB4260 IRHNB7260 |
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 43A I(D) | SMT
RADIATION HARDENED POWER MOSFET SURFACE MOUNT(SMD-3)
200V 100kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
200V 1000kRad Hi-Rel Single N-Channel TID Hardened MOSFET in a SMD-3 package
|
IRF[International Rectifier]
|
| IRFB31N20D IRFS31N20DTRL |
Power MOSFET(Vdss=200V/ Rds(on)max=0.082ohm/ Id=31A)
TRANSISTOR | MOSFET | N-CHANNEL | 200V V(BR)DSS | 31A I(D) | TO-263AB 晶体管| MOSFET的| N沟道| 200伏五（巴西）直|1A条（丁）|63AB
Power MOSFET(Vdss=200V, Rds(on)max=0.082ohm, Id=31A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rds（on）最大值\u003d 0.082ohm，身份证\u003d 31A条）
|
International Rectifier, Corp.
|
| FQI32N20C FQB32N20C FQB32N20CTM |
200V N-Channel Advance Q-FET C-Series
200V N-Channel MOSFET 28 A, 200 V, 0.082 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
|
| IRFM220B IRFM220BTFFP001 IRFM220BD84Z |
1.13 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFM220A
|
FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
|
| IRFP240 IRFP250NPBF IRFP240PBF |
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=20A) 功率MOSFET（减振钢板基本\u003d 200V的电压，的Rdson）\u003d 0.18ohm，身份证\u003d 20A条）
HEXFET? Power MOSFET
200V Single N-Channel HEXFET Power MOSFET in a TO-247AC package
|
International Rectifier, Corp.
IRF[International Rectifier]
|
| FQD10N20 FQU10N20 FQP10N20 FQ10N20 FQD10N20TM FQU1 |
200V N-Channel MOSFET
CAP 3900PF 50V 1% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22
200 N-Channel MOSFET
200V N-Channel QFET
|
Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
http://
|
